Structural study of Ge/GaAs thin films
نویسندگان
چکیده
منابع مشابه
Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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چکیده ندارد.
15 صفحه اولFabrication of Nb/V co-doped TiO2 thin films and study of structural, optical and photocatalytic properties
In this study, different samples of Niobium and Vanadium co-doped titania thin films (5-10-15 mol% Nb and 5-10-15 mol% V) were prepared via sol−gel dip coating method, using niobium chloride as niobium precursor, ammonium metavanadate as vanadium precursor, and titanium (IV) butoxide (TBT) as titanium precursor. The effects of doping amount on the structural, optical, and photo-catalytic prope...
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In this study, different samples of Niobium and Vanadium co-doped titania thin films (5-10-15 mol% Nb and 5-10-15 mol% V) were prepared via sol−gel dip coating method, using niobium chloride as niobium precursor, ammonium metavanadate as vanadium precursor, and titanium (IV) butoxide (TBT) as titanium precursor. The effects of doping amount on the structural, optical, and photo-catalytic prope...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2012
ISSN: 1742-6596
DOI: 10.1088/1742-6596/371/1/012040